| PART |
Description |
Maker |
| IRG4PC30S IRG4PC30SPBF |
600V DC-1 kHz (Standard) Discrete IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A)
|
IRF[International Rectifier]
|
| RJQ6015DPM-00T0 RJQ6015DPM-15 |
600V - 18A - IGBT and Diode Application: Inverter
|
Renesas Electronics Corporation
|
| IRG4BC30S |
600V DC-1 kHz (Standard) Discrete IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A) 绝缘栅双极晶体管（VCES和\u003d 600V电压的Vce（on）典\u003d.4V，@和VGE \u003d 15V的，集成电路\u003d 18A条）
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| IRGPC30S |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=18A)
|
IRF[International Rectifier]
|
| IRGBC30S |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=18A)
|
IRF[International Rectifier]
|
| HUF75829D3S HUF75829D3 HUF75829D3ST |
18A, 150V, 0.110 Ohm, N-Channel,UltraFET Power MOSFET
18A, 150V, 0.110 Ohm, N-Channel, UltraFETPower MOSFET
18A, 150V, 0.110 Ohm, N-Channel, UltraFET Power MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| TP0205A-T1 |
Trans MOSFET P-CH 20V 0.18A 3-Pin SC-70 T/R
180 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
Vishay Siliconix
|
| STB4NC60 8256 STB4NC60T4 |
INTEGRATED EC000 MPU N沟道600V 1.8ohm - 4.2A D2PAK封装MOSFET的第二PowerMesh
N-CHANNEL 600V - 1.8ohm - 4.2A D2PAK PowerMesh?II MOSFET
N-CHANNEL 600V 1.8 OHM 4.2A D2PAK POWERMESH II MOSFET
From old datasheet system
N-CHANNEL 600V - 1.8ohm - 4.2A D2PAK PowerMesh⑩II MOSFET
N-CHANNEL 600V 1.8 OHM 4.2A D2PAK POWERMESH II MOSFET
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| AOTF18N65 |
650V,18A N-Channel MOSFET
|
ShenZhen FreesCale Electronics. Co., Ltd
|
| AOK18N65 |
650V,18A N-Channel MOSFET
|
ShenZhen FreesCale Electronics. Co., Ltd
|
| IRF640 |
18A 200V N CHANNEL POWER MOSFET
|
First Components Intern...
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